fep(f,b)16at thru fep(f,b)16jt vishay general semiconductor document number: 88596 revision: 07-nov-07 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 dual common-cathode ultrafast plastic rectifier features ? glass passivated chip junction ? ultrafast recovery time ? low switching losses, high efficiency ? high forward surge capability ? aec q101 qualified ? meets msl level 1, per j-std-020, lf maximum peak of 245 c (for TO-263AB package) ? solder dip 260 c, 40 s (for to-220ab and ito-220ab package) ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application. mechanical data case: to-220ab, ito-220ab, TO-263AB epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test, he3 suffix for high reliability grade (aec q101 qualified), meets jesd 201 class 2 whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 8.0 a x 2 v rrm 50 v to 600 v i fsm 200 a, 125 a t rr 35 ns, 50 ns v f 0.95 v, 1.30 v, 1.50 v t j max. 150 c case pin 2 pin 1 pin 3 to-220ab fep16xt ito-220ab fepf16xt fepb16xt pin 1 pin 2 k heatsink 1 2 3 1 2 k pin 2 pin 1 pin 3 TO-263AB 1 2 3 maximum ratings (t c = 25 c unless otherwise noted) parameter symbol fep 16at fep 16bt fep 16ct fep 16dt fep 16ft fep 16gt fep 16ht fep 16jt unit maximum repetitive peak reverse voltage v rrm 50 100 150 200 300 400 500 600 v maximum rms voltage v rms 35 70 105 140 210 280 350 420 v maximum dc blocking voltage v dc 50 100 150 200 300 400 500 600 v maximum average forward rectified current at t c = 100 c i f(av) 16 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode i fsm 200 125 a operating storage and temperature range t j , t stg - 55 to +150 c isolation voltage (ito-220ab only) from terminal to heatsink t = 1 min v ac 1500 v
fep(f,b)16at thru fep(f,b)16jt vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88596 revision: 07-nov-07 2 note: (1) pulse test: 300 s pulse width, 1 % duty cycle note: (1) automotive grade aec q101 qualified electrical characteristics (t c = 25 c unless otherwise noted) parameter test conditions symbol fep 16at fep 16bt fep 16ct fep 16dt fep 16ft fep 16gt fep 16ht fep 16jt unit maximum instantaneous forward voltage per diode (1) 8.0 a v f 0.95 1.30 1.50 v maximum dc reverse current per diode at rated dc blocking voltage t c = 25 c t c = 100 c i r 10 500 a maximum reverse recovery time per diode i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 35 50 ns typical junction capacitance per diode 4.0 v, 1 mhz c j 85 60 pf thermal characteristics (t c = 25 c unless otherwise noted) parameter symbol fep fepf fepb unit typical thermal resistance from junction to case per diode r jc 2.2 3.1 2.2 c/w ordering information (example) package preferred p/n unit weight (g) package code base quantity delivery mode to-220ab fep16jt-e3/45 1.85 45 50/tube tube ito-220ab fepf16jt-e3/45 1.97 45 50/tube tube TO-263AB fepb16jt-e3/45 1.35 45 50/tube tube TO-263AB fepb16jt-e3/81 1.35 81 800/reel tape and reel to-220ab fep16jthe3/45 (1) 1.85 45 50/tube tube ito-220ab fepf16jthe3/45 (1) 1.97 45 50/tube tube TO-263AB fepb16jthe3/45 (1) 1.35 45 50/tube tube TO-263AB fepb16jthe3/81 (1) 1.35 81 800/reel tape and reel
fep(f,b)16at thru fep(f,b)16jt vishay general semiconductor document number: 88596 revision: 07-nov-07 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 ratings and characteristics curves (t a = 25 c unless otherwise noted) figure 1. forward current derating curve figure 2. maximum non-repetitive peak forward surge current per diode figure 3. typical instantaneous forw ard characteristics per diode 0 50 100 150 0 4 8 12 16 20 a v erage for w ard c u rrent (a) case temperat u re (c) resisti v e or ind u cti v e load 1 10 100 0 50 100 150 200 250 300 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) t c = 100 c 8 .3 ms single half sine- w a v e 0.2 0.6 0.4 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 0.1 1 10 100 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 50 - 400 v 300 - 400 v 500 - 600 v t j = 125 c t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle figure 4. typical reverse characteristics per diode figure 5. typical juncti on capacitance per diode 0 20 40 60 8 0 100 0.1 0.01 1 10 100 50 - 400 v 500 - 600 v t j = 100 c t j = 125 c t j = 25 c percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse leakage c u rrent ( a) 0.1 1 10 100 10 100 1000 re v erse v oltage ( v ) j u nction capacitance (pf) 50 - 400 v 500 - 600 v t j = 125 c f = 1.0 mhz v sig = 50 m v p-p
fep(f,b)16at thru fep(f,b)16jt vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88596 revision: 07-nov-07 4 package outline dimensions in inches (millimeters) to-220ab 0.113 (2. 8 7) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) 0.415 (10.54) max. 0.635 (16.13) 0.625 (15. 8 7) pi n 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.02 8 (0.70) 0.154 (3.91) 0.14 8 (3.74) 1 3 2 0.1 8 5 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.6 8 ) 0.135 (3.43) 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 1.14 8 (29.16) 1.11 8 (2 8 .40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) ito-220ab 0.076 (1.93) ref. 45 ref. pi n 3 2 1 0.404 (10.26) 0.3 8 4 (9.75) 0.076 (1.93) ref. 0.600 (15.24) 0.5 8 0 (14.73) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.191 (4. 8 5) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.035 (0. 8 9) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.025 (0.64) 0.015 (0.3 8 ) 0.105 (2.67) 0.095 (2.41) 0.02 8 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7 ref. 0.135 (3.43) dia. 0.122 (3.0 8 ) dia. 0.110 (2.79) 0.100 (2.54) 0.190 (4. 8 3) 0.170 (4.32) 7 ref. 7 ref. 0.140 (3.56) dia. 0.125 (3.17) dia. 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) TO-263AB mo u nting pad layo u t 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.0 8 (2.032) mi n . 0.15 (3. 8 1) mi n . 0.33 ( 8 .3 8 ) mi n . 0.42 (10.66) mi n . 12 k k 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4. 8 3) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15. 8 5) 0.591 (15.00) 0.037 (0.940) 0.027 (0.6 8 6) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 ( 8 .13) 0.411 (10.45) 0.3 8 0 (9.65) 0.245 (6.22) mi n .
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